Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3 inductively coupled plasmas

被引：4

作者：

Zhang, Zhonghua ^{[1
,3
]}

Song, Sannian ^{[1
]}

Song, Zhitang ^{[1
]}

Cheng, Yan ^{[1
]}

Peng, Cheng ^{[1
]}

Zhang, Ling ^{[2
]}

Cao, Duanchao ^{[2
]}

Guo, Xiaohui ^{[1
]}

Yin, Weijun ^{[1
]}

Wu, Liangcai ^{[1
]}

Liu, Bo ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China

[3] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2014年 / 115卷

基金：

中国国家自然科学基金;

关键词：

Phase change material; Etching; Inductively coupled plasmas; PHASE-CHANGE MATERIALS;

D O I：

10.1016/j.mee.2013.10.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Inductively coupled plasmas etching of Al1.3Sb3Te (AST) films were studied using Cl-2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbClx, on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：51 / 54

页数：4

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