Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3 inductively coupled plasmas

被引：4

作者：

Zhang, Zhonghua ^{[1
,3
]}

Song, Sannian ^{[1
]}

Song, Zhitang ^{[1
]}

Cheng, Yan ^{[1
]}

Peng, Cheng ^{[1
]}

Zhang, Ling ^{[2
]}

Cao, Duanchao ^{[2
]}

Guo, Xiaohui ^{[1
]}

Yin, Weijun ^{[1
]}

Wu, Liangcai ^{[1
]}

Liu, Bo ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China

[3] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2014年 / 115卷

基金：

中国国家自然科学基金;

关键词：

Phase change material; Etching; Inductively coupled plasmas; PHASE-CHANGE MATERIALS;

D O I：

10.1016/j.mee.2013.10.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Inductively coupled plasmas etching of Al1.3Sb3Te (AST) films were studied using Cl-2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbClx, on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：51 / 54

页数：4

共 50 条

[1] Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas
Shen, Lanlan
Song, Sannian
Zhang, Zhonghua
Song, Zhitang
Chen, Yan
Zhu, Yueqin
Guo, Xiaohui
Yin, Weijun
Yao, Dongning
Liu, Bo
Feng, Songlin
THIN SOLID FILMS, 2015, 593 : 67 - 70
[2] Characteristics of inductively coupled Cl2/BCl3 plasmas during GaN etching
Kim, HS
Yeom, GY
Lee, JW
Kim, TI
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04): : 2214 - 2219
[3] Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
Lee, Y.H.
Kim, H.S.
Yeom, G.Y.
Lee, J.W.
Yoo, M.C.
Kim, T.I.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (3 pt 2):
[4] Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
Lee, YH
Kim, HS
Yeom, GY
Lee, JW
Yoo, MC
Kim, TI
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1478 - 1482
[5] Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas
Zhou, Shengjun
Cao, Bin
Liu, Sheng
APPLIED SURFACE SCIENCE, 2010, 257 (03) : 905 - 910
[6] Magnetized inductively coupled plasma etching of GaN in Cl2/BCl3 plasmas
Lee, YH
Sung, YJ
Yeom, GY
Lee, JW
Kim, TI
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (04): : 1390 - 1394
[7] Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
Tripathy, S
Ramam, A
Chua, SJ
Pan, JS
Huan, A
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (05): : 2522 - 2532
[8] Nonselective etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas
Yanjun Han
Song Xue
Tong Wu
Zhen Wu
Wenping Guo
Yi Luo
Zhibiao Hao
Changzheng Sun
Science in China Series E: Technological Sciences, 2004, 47 : 150 - 158
[9] Nonselective etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas
Han, YJ
Xue, S
Wu, T
Wu, Z
Guo, WP
Luo, Y
Hao, ZB
Sun, CZ
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2004, 47 (02): : 150 - 158
[10] Fast and smooth etching of indium tin oxides in BCl3/Cl2 inductively coupled plasmas
Andagana, H. B.
Cao, X. A.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (02): : 189 - 192

← 1 2 3 4 5 →