p-Type doping of GaAs(001) layers grown by MBE using silicon as a dopant

被引：13

作者：

Quivy, AA ^{[1
]}

Sperandio, AL ^{[1
]}

da Silva, ECF ^{[1
]}

Leite, JR ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, Lab Novos Mat Semiconductores, BR-05315970 Sao Paulo, Brazil

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 206卷 / 03期

基金：

巴西圣保罗研究基金会;

关键词：

GaAs layer; silicon; dopant;

D O I：

10.1016/S0022-0248(99)00325-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For the first time, a thick p-type GaAs layer was successfully grown by molecular beam epitaxy on a GaAs(0 0 1) substrate using Si as the dopant. A hole concentration in the range of 10(18) cm(-3) was achieved by a nonconventional growth method involving the supply of a few monolayers of Ga atoms together with the dopant (the As-4 cell was shuttered), followed by annealing in As-4 (the Ga and Si cells were shuttered). The repetition of this sequence led to a thick p-type layer as shown by Hall and photoluminescence measurements. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：171 / 176

页数：6

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