CMP dishing effects in shallow trench isolation

被引：0
|
作者：
Smekalin, K
机构：
来源：
SOLID STATE TECHNOLOGY | 1997年 / 40卷 / 07期
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Chemical mechanical polishing (CMP) causes excessive thinning of large exposed areas (or ''dishing'') due to polishing pad elasticity. Dishing is known to be highly dependent on feature size. For shallow trench isolation (STI) areas below 10 mu m in minimum dimension, a second microscale dishing effect was discovered that is independent of feature size and CMP parameters. A two-step CMP/RIE process, which is fully compatible with STI processing, eliminates microscale dishing.
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页码：187 / &
页数：5
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