Piezoelectric exciton acoustic-phonon coupling in single quantum dots

被引:10
|
作者
Sarkar, D. [1 ]
van der Meulen, H. P. [1 ]
Calleja, J. M. [1 ]
Meyer, J. M. [2 ]
Haug, R. J. [2 ]
Pierz, K. [3 ]
机构
[1] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain
[2] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[3] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany
来源
PHYSICAL REVIEW B | 2008年 / 78卷 / 24期
关键词
aluminium compounds; deformation; excited states; III-V semiconductors; indium compounds; phonon-exciton interactions; photoluminescence; piezoelectricity; self-assembly; semiconductor quantum dots;
D O I
10.1103/PhysRevB.78.241305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Microphotoluminescence spectroscopy at variable temperature, excitation intensity, and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line [zero-phonon line (ZPL)] exhibits a broad sideband due to exciton acoustic-phonon coupling by the deformation-potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attributed to exciton acoustic-phonon piezoelectric coupling. In lowering the excitation energy or intensity these bands gradually dominate the emission spectrum of the quantum dot while the ZPL disappears. At high excitation intensity the sidebands due to piezoelectric coupling decrease strongly and the ZPL dominates the spectrum as a consequence of screening of the piezoelectric coupling by the photocreated free carriers.
引用
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页数:4
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