AlGaAs/GaAs quantum well heterostructures grown by the low temperature LPE technique.

被引：0
|
作者：
DiazArencibia, P [1 ]
TorresDelgado, G [1 ]
MendozaAlvarez, J [1 ]
Prutskij, T [1 ]
ChavezRamirez, F [1 ]
SilvaAndrade, E [1 ]
机构：
[1] IPN,CINVESTAV,DEPT PHYS,MEXICO CITY 07738,DF,MEXICO
来源：
SURFACES, VACUUM, AND THEIR APPLICATIONS | 1996年 / 378期
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
引用
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页码：151 / 155
页数：5
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