Kinetics of self-bleaching in some photodarkened Ge-As-S amorphous thin films

被引：2

作者：

Kincl, M.

Tichy, L. ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Macromol Chem, Joint Lab Solid State Chem, Pardubice 53210, Czech Republic

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 45-46期

关键词：

Photoinduced effects;

D O I：

10.1016/j.jnoncrysol.2008.07.010

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Three amorphous Ge-As-S films with the average coordination numbers of 2.4-2.8 were prepared by thermal evaporation. True relaxation that is self-bleaching of photodarkened state has been studied. Considerable differences in kinetics of relaxation of photodarkened state were observed for Ge12As17S71 (Sa 1) and Ge15As20S65 (Sa 3) amorphous thin films. In both cases, the relaxation (self-bleaching) followed stretched exponential, however, flexible matrix of Sa 1 film relaxed significantly faster than the matrix of Sa 3 film. The amorphous film Ge25.5As29.5S45 (Sa 8) was found to be insensitive to illumination. It is suggested that the network rigidity may significantly influence the magnitude of photodarkening and the rate of relaxation of photodarkened state. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：4948 / 4951

页数：4

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