ZnCdSe/ZnCdMgSe Quantum Well Infrared Photodetector

被引：0
|
作者：
Ravikumar, Arvind Pawan [1 ]
Alfaro-Martinez, Adrian [2 ]
Chen, Guopeng [3 ]
Zhao, Kaile [3 ]
Tamargo, Maria C. [2 ]
Gmachl, Claire [1 ]
Shen, Aidong [3 ]
机构：
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] CUNY City Coll, Dept Chem, New York, NY 10031 USA
[3] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA
来源：
2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2012年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the design, fabrication and characterization of a II-VI ZnCdSe/ZnCdMgSe quantum well infrared photodetector with a bound to quasi-bound transition centered at 8.7 mu m. Absorption, photocurrent measurements yield results consistent with conventional III-V QWIPs.
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页数：2
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