Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

被引：79

作者：

Paladugu, Mohanchand ^{[1
]}

Zou, Jin ^{[1
,2
]}

Guo, Ya-Nan ^{[1
]}

Zhang, Xin ^{[1
]}

Kim, Yong ^{[3
]}

Joyce, Hannah J. ^{[4
]}

Gao, Qiang ^{[4
]}

Tan, H. Hoe ^{[4
]}

Jagadish, C. ^{[4
]}

机构：

[1] Univ Queensland, Sch Engn, St Lucia, Qld 4072, Australia

[2] Univ Queensland, Ctr Microscopy & Microanal, St Lucia, Qld 4072, Australia

[3] Dong A Univ, Dept Phys, Pusan 604714, South Korea

[4] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2978959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III elements with the catalyst material. (C) 2008 American Institute of Physics.

引用

页数：3

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