Structures with vertically stacked Ge/Si quantum dots for logical operations

被引：1

作者：

Morokov, Yu N. ^{[1
]}

Fedoruk, M. P. ^{[1
]}

Dvurechenskii, A. V. ^{[2
]}

Zinov'eva, A. F. ^{[2
]}

Nenashev, A. V. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Computat Technol, Siberian Branch, Novosibirsk 630090, Russia

[2] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 07期

关键词：

ELECTRONIC-STRUCTURE; BAND LINEUPS; HETEROSTRUCTURES; NANOSTRUCTURES; CRYSTALS; DIAMOND; BINDING; QUBITS;

D O I：

10.1134/S1063782612070147

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and an atomistic model based on the Keating potential. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduction band. It is shown that the development of multilayer structures with vertically stacked quantum dots makes it possible to fabricate deep potential wells for electrons with vertical tunnel coupling.

引用

页码：937 / 942

页数：6

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