Influence of annealing temperature on properties of RF sputtered InxSy buffer layers in Cu(In,Ga)Se2 solar cells

被引：0
|
作者：
Wang, Demiao [1 ]
Lu, Jingping [1 ]
Li, Yuandong [1 ]
机构：
[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310003, Zhejiang, Peoples R China
来源：
2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2012年
关键词：
SULFIDE THIN-FILMS; CHEMICAL-VAPOR-DEPOSITION;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Sputtered InxSy layers were deposited on glass at post-annealing temperature ranging from 623 to 723K. Investigation of the properties indicated decreased optical band-gap and changes in microstructure with increasing annealing temperature.
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页数：3
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