Probing a two-step channel formation process in injection-type pentacene field-effect transistors by time-resolved electric-field-induced optical second-harmonic generation measurement

被引：4
|
作者：
Taguchi, Dai [1 ]
Masada, Hiroshi [1 ]
Manaka, Takaaki [1 ]
Iwamoto, Mitsumasa [1 ]
Nishiura, Takao [2 ]
Iizuka, Tetsuya [2 ]
Takemori, Toshifumi [2 ]
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
[2] Maruzen Kasei Co Ltd, Res Ctr, Ichihara, Chiba 2908503, Japan
来源：
ORGANIC ELECTRONICS | 2012年 / 13卷 / 12期
关键词：
Organic field-effect transistor; Electric-field-induced second-harmonic generation; Gate dielectric; Maxwell-Wagner effect; Local electric field; Surface polarization; ORGANIC TRANSISTORS; MONOLAYERS; VOLTAGE; MOTION;
D O I：
10.1016/j.orgel.2012.08.030
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
By using time-resolved electric-field-induced optical second-harmonic generation measurement, we studied carrier motion in pentacene field-effect transistors (FETs) with poly-4-vinylphenol (PVP) and with polyimide (PI) gate-insulator whose active layers were depleted by pre-biasing. Upon removal of the pre-biasing, channel formation proceeded as a two-step process in FETs with PVP gate-insulator and a conduction channel was formed eventually. On the other hand, no conduction channel was formed in FETs with PI gate-insulator but two-step carrier propagation was observed in a similar way. Results showed that a local electric field induced on the gate-insulator surface gives a significant effect on the carrier injection and the following carrier transport. (C) 2012 Elsevier B.V. All rights reserved.
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页码：2801 / 2806
页数：6
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