Nanoparticle process formation in zinc implanted silicon with followed thermal annealing

被引：3

作者：

Privezentsev, V. V. ^{[1
]}

Kulikauskas, V. S. ^{[2
]}

Zatekin, V. V. ^{[2
]}

Chernykh, P. N. ^{[2
]}

Petrov, D. V. ^{[2
]}

Makunin, A. V. ^{[2
]}

Shcherbachev, K. D. ^{[3
]}

机构：

[1] Russian Acad Sci, Inst Phys & Technol, Moscow 117218, Russia

[2] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia

[3] Natl Res Technol Univ, Moscow Inst Steel & Alloys, Moscow 119049, Russia

来源：

JOURNAL OF SURFACE INVESTIGATION | 2012年 / 6卷 / 02期

关键词：

Surface Investigation; Neutron Technique; Secondary Electron Mode; Rutherford Back Scattering; Zinc Diffusion;

D O I：

10.1134/S102745101204012X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Results of temperature treatment effect on near surface layer properties of Zn ion implanted Si substrate are presented. Radiation induced point defects and Zn in depth profile was studied by Rutherford back scattering (RBS) method with use of channeling technique. Topology of substrate surface was studied by atomic force microscopy (AFM) and scaning electron microscope (SEM). Phase composition of samples was test by x-ray diffraction in grazing geometry.

引用

页码：314 / 318

页数：5

共 50 条

[41] SILICON NANOPARTICLE FORMATION IN SI+-IMPLANTED THERMAL OXIDE-FILMS AND VISIBLE PHOTOLUMINESCENCE BEHAVIOR
SHIMIZUIWAYAMA, T
NAKAO, S
SAITOH, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 34 : 86 - 88
[42] Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing
Carder, D. A.
Markwitz, A.
Kennedy, J.
JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (08) : 1262 - 1267
[43] Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing
D.A. Carder
A. Markwitz
J. Kennedy
Journal of Electronic Materials, 2010, 39 : 1262 - 1267
[44] RAPID THERMAL ANNEALING OF ARSENIC, BERYLLIUM AND ZINC DUAL IMPLANTED ALGAAS
HO, P
CHUNG, Y
AEBI, VW
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 581 - 583
[45] LASER ANNEALING OF IMPLANTED SILICON
KUTUKOVA, OG
STRELTSOV, LN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 265 - 267
[46] ANNEALING STAGES OF IMPLANTED SILICON
HLAVKA, J
GRNO, J
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1989, 112 (01): : 327 - 330
[47] RAPID THERMAL ANNEALING OF BF2+ IMPLANTED, PREAMORPHIZED SILICON
SEIDEL, TE
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 353 - 355
[48] DIFFUSION OF IMPURITIES FROM IMPLANTED SILICON LAYERS BY RAPID THERMAL ANNEALING
ALEKSANDROV, OV
KOZLOVSKII, VV
POPOV, VV
SAMORUKOV, BE
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 110 (02): : K61 - K65
[49] Photoluminescence Study on Ion Implanted Silicon after Rapid Thermal Annealing
Takashima, Shuhei
Yoshimoto, Masahiro
Yoo, Woo Sik
ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2009, 19 (01): : 147 - +
[50] DIODE STRUCTURES FORMED BY RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON
LUNNON, ME
CHEN, JT
BAKER, JE
APPLIED PHYSICS LETTERS, 1985, 46 (01) : 35 - 37

← 1 2 3 4 5 →