Testbeam studies of pre-prototype silicon strip sensors for the LHCb UT upgrade project

被引:1
|
作者
Abba, A. [1 ]
Artuso, M. [2 ]
Blusk, S. [2 ,6 ]
Britton, T. [2 ]
Davis, A. [3 ]
Dendek, A. [4 ]
Dey, B. [5 ]
Ely, S. [2 ]
Evans, T. [7 ]
Fu, J. [1 ]
Gandini, P. [2 ]
Lionetto, F. [5 ]
Manning, P. [2 ]
Meadows, B. [3 ]
Mountain, R. [2 ]
Neri, N. [1 ]
Petruzzo, M. [1 ]
Pikies, M. [4 ]
Skwarnicki, T. [2 ]
Szumlak, T. [4 ]
Wang, J. C. [2 ]
机构
[1] Inst Nazl Fis Nucl, Sez Milano, Milan, Italy
[2] Syracuse Univ, Syracuse, NY USA
[3] Univ Cincinnati, Cincinnati, OH USA
[4] AGH Univ Sci & Technol, Fac Phys & Appl Comp Sci, PL-30059 Krakow, Poland
[5] Univ Zurich, Inst Phys, Zurich, Switzerland
[6] European Org Nucl Res CERN, Geneva, Switzerland
[7] Univ Oxford, Dept Phys, Oxford, England
关键词
Silicon strip detector; Testbeam; Sensor irradiation; TELESCOPE; SYSTEM;
D O I
10.1016/j.nima.2015.10.031
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The LHCb experiment is preparing for a major upgrade in 2018-2019. One of the key components in the upgrade is a new silicon tracker situated upstream of the analysis magnet of the experiment. The Upstream Tracker (UT) will consist of four planes of silicon strip detectors, with each plane covering an area of about 2 m(2). An important consideration of these detectors is their performance after they have been exposed to a large radiation dose. In this paper we present test beam results of pre-prototype n-in-p and p-in-n sensors that have been irradiated with fluences up to 4.0 x 10(14) neq/cm(2). (C) 2015 The Authors. Published by Elsevier B.V.
引用
收藏
页码:244 / 257
页数:14
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