Monolithically integrated dual-wavelength photodetector based on a step-shaped Fabry-Perot filter

被引：2
|
作者：
Fan, Xinye [1 ]
Huang, Yongqing [1 ]
Ren, Xiaomin [1 ]
Duan, Xiaofeng [1 ]
Hu, Fuquan [1 ]
Wang, Qi [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
来源：
CHINESE OPTICS LETTERS | 2012年 / 10卷 / 11期
基金：
中国国家自然科学基金;
关键词：
GAAS SUBSTRATE; TRANSMISSION; CAVITY; VCSELS; ARRAY;
D O I：
10.3788/COL201210.110402
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Perot (F-P) filter structure. The step-shaped GaAs/AlGaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition. High quality GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. The photodetector structure is optimized by theoretical simulation. This device has a dual-peak distance of 19 ran (1 558 and 1 577 nm). The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak quantum efficiencies of 8.5% and 8.6% around 1558 and 1577 nm, respectively.
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页数：4
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