Homoepitaxial growth of HVPE-GaN doped with Si

被引：33

作者：

Iwinska, M. ^{[1
]}

Sochacki, T. ^{[1
]}

Amilusik, M. ^{[1
]}

Kempisty, P. ^{[1
]}

Lucznik, B. ^{[1
]}

Fijalkowski, M. ^{[1
]}

Litwin-Staszewska, E. ^{[1
]}

Smalc-Koziorowska, J. ^{[1
]}

Khapuridze, A. ^{[1
]}

Staszczak, G. ^{[1
]}

Grzegory, I. ^{[1
]}

Bockowski, M. ^{[1
]}

机构：

[1] Inst High Pressure Phys PAS, Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 456卷

关键词：

Characterization; Hydride vapor phase epitaxy; GaN; Nitrides; Semiconducting III-V materials; YELLOW LUMINESCENCE; SEEDS;

D O I：

10.1016/j.jcrysgro.2016.08.043

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Results of growth of high structural quality gallium nitride single crystals doped with silicon are described in this paper. Dichlorosilane was used as precursor of silicon in the hydride vapor phase epitaxy method. Crystallization runs with different flows of dichlorosilane were performed and compared. One inch free-standing HVPE-GaN crystals of high structural quality and high purity, previously grown on ammonothermal GaN substrates, were used as seeds. Structural, electrical, and optical properties of HVPE-GaN doped with silicon are presented and discussed in detail. A laser diode built on the homo-epitaxially grown GaN is demonstrated. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：91 / 96

页数：6

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