A G-band (140-220 GHz) Microstrip MMIC Mixer operating in both Resistive and Drain-Pumped Mode

被引：0

作者：

Gunnarsson, Sten E. ^{[1
]}

Wadefalk, Niklas ^{[1
]}

Angelov, Iltcho ^{[1
]}

Zirath, Herbert ^{[1
,2
]}

Kallfass, Ingmar ^{[3
]}

Leuther, Amulf ^{[3
]}

机构：

[1] Chalmers Univ Technol, Microwave Elect Lab, MC2, S-41296 Gothenburg, Sweden

[2] Ericsson AB, MHSERC, Molndal, Sweden

[3] Fraunhofer Inst Appl Solid State Phys, Freiburg, Germany

来源：

2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年

关键词：

Drain mixer; G-band; GaAs; mHEMT; microstrip; MMIC; resistive mixer;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and characterization of a G-band microstrip single-ended MMIC mixer in a 0.1 mu m GaAs mHEMT technology. The mixer is measured in both resistive and drain-pumped mode of operation and a comparison between the two mixer topologies is made. Conversion loss versus RF and IF frequencies as well as loss versus applied LO power are presented in the 180 to 230 GHz band. The RF and IF 3-dB bandwidths are both limited by the measurement setup rather than the mixer itself and measures >30 GRz and >50 GHz, respectively. Both the bandwidths and frequency of operation are state-of-the-art for a MMIC mixer, regardless of technology. Applications include e.g. wireless transfer of very high data rates (>10 Gbps) and broadband radiometer front-ends covering several interesting frequency bands.

引用

页码：406 / +

页数：2

共 16 条

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