Spin relaxation of 2D electron in Si/SiGe quantum well suppressed by applied magnetic field

被引：1
|
作者：
Wilamowski, Z
Jantsch, W
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期
关键词：
D O I：
10.1088/0268-1242/19/4/128
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate spin resonance of two-dimensional (213) conduction electrons in a modulation-doped SiGe/Si/SiGe quantum well structure. We find spin relaxation times of the order of microseconds and a 2D anisotropy of both the line broadening (dephasing time) and of the longitudinal spin relaxation. The spin relaxation is dominated by the D'yakonov-Perel spin relaxation mechanism originating from the Bychkov-Rashba spin-orbit field. We find evidence that for high mobility samples the cyclotron motion causes an additional modulation of spin-orbit coupling which leads to an effective reduction of the spin relaxation. For 2D electrons the dependence of the cyclotron frequency on the direction of applied field causes the observed anisotropy of spin relaxation.
引用
收藏
页码：S390 / S391
页数：2
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