Extrinsic mechanism for colossal dielectric constant in CaCu3Ti4O12 ceramics evidenced by nanodomain

被引：12
|
作者：
Patel, Piyush Kumar [1 ]
Yadav, K. L. [1 ]
机构：
[1] Indian Inst Technol, Dept Phys, Smart Mat Res Lab, Roorkee 247667, Uttar Pradesh, India
来源：
MATERIALS RESEARCH EXPRESS | 2014年 / 1卷 / 01期
关键词：
ceramic; grain growth; nanodomain; colossal dielectric constant; dislocation; MICROSTRUCTURE; SPECTROSCOPY;
D O I：
10.1088/2053-1591/1/1/015037
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the effect of various sintering temperature and dwell time on phase formation, microstructure and dielectric properties of CaCu3Ti4O12 ceramic synthesized by sol-gel method. The dielectric property was greatly influenced by sintering temperature and dwell time. We found colossal dielectric constant (similar to 153 816) with low dielectric loss (similar to 0.20) for 1100 degrees C/4 h sintered sample at room temperature and 1 kHz frequency. Impedance spectroscopy results support the grain boundary barrier layer capacitor model. Observation of nanostripe structure domains inside the grains of CaCu3Ti4O12 confirms the extrinsic mechanism for colossal dielectric response of this material.
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收藏
页数：12
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