Anderson localization and topological transition in Chern insulators

被引：34
|
作者：
Castro, Eduardo V. [1 ,2 ]
Lopez-Sancho, M. Pilar [3 ]
Vozmediano, Maria A. H. [3 ]
机构：
[1] Univ Lisbon, Inst Super Tecn, CeFEMA, P-1049001 Lisbon, Portugal
[2] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China
[3] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
来源：
PHYSICAL REVIEW B | 2015年 / 92卷 / 08期
关键词：
SCALING THEORY; LATTICES; REALIZATION; DIFFUSION; ABSENCE; MODEL;
D O I：
10.1103/PhysRevB.92.085410
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We analyze the topological transition and localization evolution of disordered two-dimensional systems with nontrivial topology based on bipartite lattices. Chern insulators with broken time-reversal symmetry show nonstandard behavior for disorder realizations selectively distributed on only one of the sublattices. The Chern number survives to a much stronger disorder strength (one order of magnitude higher) than in the equally distributed disordered case, and the final state in the strongly disordered case is metallic.
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页数：6
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