State-of-the-Art THz Integrated Circuits in InP HBT Technologies

被引:0
|
作者
Kang, Sungbin [1 ]
Kim, Dongwoo [1 ]
Urteaga, Miguel [2 ]
Seo, Munkyo [1 ]
机构
[1] Sungkyunkwan Univ, Coll Informat & Comm Engn, Suwon, South Korea
[2] Teledyne Sci Co, Thousand Oaks, CA 91360 USA
关键词
terahertz; terahertz integrated circuits; InP HBT;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, state-of-the-art terahertz (THz) integrated circuits in InP HBT technologies operating in the 500-600 GHz band are reviewed: the highest-frequency fundamental transistor oscillator, THz power amplifier in HBT with the highest saturated output power, the highest-frequency dynamic frequency divider, and the highest-frequency transmit/receive front-end integrated circuits, to the best of authors' knowledge.
引用
收藏
页码:25 / 27
页数:3
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