0.5-25 GHz inductorless single-ended resistive mixer in 0.13 μm CMOS

被引：6

作者：

Issakov, V. ^{[1
]}

Thiede, A. ^{[1
]}

Verweyen, L. ^{[2
]}

Tiebout, M. ^{[3
]}

机构：

[1] Univ Gesamthsch Paderborn, Dept High Frequency Elect, D-33098 Paderborn, Germany

[2] Infineon Technol AG, D-85579 Neubiberg, Germany

[3] Infineon Technol Austria AG, A-9500 Villach, Austria

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 02期

关键词：

PASSIVE-MIXER;

D O I：

10.1049/el:20092599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wideband inductorless resistive down-conversion mixer in 0.13 mu m CMOS technology is presented. The mixer provides a conversion loss of 9-11.7 dB over a frequency range of 0.5-25 GHz at LO power of 6 dBm. The circuit exhibits an input-referred 1 dB compression point and IIP3 of 4.7 and 11.5 dBm, respectively. The mixer consumes only 0.2 mA from 1.5 V for biasing. The isolation between the ports is higher than 10 dB for the whole frequency range. The circuit is realised without inductors, thus offering very wide bandwidth. The chip size including the pads is 0.23 mm(2), and the circuit active area is only 0.014 mm(2).

引用

页码：108 / 109

页数：2

共 50 条

[21] A 4.4mW Inductorless 2-20 GHz Single-Ended to Differential Frequency Doubler in 45 nm RFSOI CMOS Technology
Meyer, A.
Leyrer, M. L.
Ziegler, C.
Maier, M.
Lammert, V.
Issakov, V.
2023 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC, 2023, : 209 - 212
[22] A high performance 2-GHz direct-conversion front end with single-ended RF input in 0.13 um CMOS
Feng, Yiping
Takemura, Gaku
Kawaguchi, Shunji
Kinget, Peter
2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2, 2008, : 303 - +
[23] A Polymorphic 15GHz/mW Inductorless Frequency Prescaler using Implication Logic in 0.13μm CMOS
Roa, Elkim
Chen, Wu-Hsin
Jung, Byunghoo
PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2012, : 71 - 73
[24] A 2.4 GHz 0.18-μm CMOS Class E Single-Ended Power Amplifier without Spiral Inductors
Murad, S. A. Z.
Pokharel, R. K.
Kanaya, H.
Yoshida, K.
2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2010, : 25 - 28
[25] A 24 GHz Highly Linear Up-Conversion Mixer in CMOS 0.13 μm Technology
Won, You-Sun
Kim, Chung-Hwan
Lee, Sang-Gug
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2015, 25 (06) : 400 - 402
[26] Sub-1 dB Noise Figure CMOS Single-Ended 2.1 GHz LNA in 0.35 μm Technology
Ivanciu, Laura-Nicoleta
Soeser, Peter
Hintea, Sorin
2013 21ST TELECOMMUNICATIONS FORUM (TELFOR), 2013, : 616 - +
[27] A Single-Balanced 60-GHz Down-Conversion Mixer in 0.13 μm CMOS Technology for WPAN Applications
Kim, Dong-Hyun
Rieh, Jae-Sung
2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2, 2009, : 501 - 502
[28] .2.4 GHz divide-by-256∼271 single-ended frequency divider in standard 0.35-μm CMOS technology
Tseng, Sheng-Che
Meng, Chinchun
Li, Shao-Yu
Su, Jen-Yi
Huang, Guo-Wei
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, : 856 - 859
[29] A 0.13-μm CMOS 2.4-GHz Low-Noise Balun-Mixer
Kim, Chang-Wan
Kim, Jeong-Yeon
Kang, Bong-Soon
IEICE TRANSACTIONS ON ELECTRONICS, 2009, E92C (09): : 1223 - 1225
[30] A 1.5-v 2-9.6-GHz inductorless low-noise amplifier in 0.13-μm CMOS
Li, Qiang
Zhang, Yue Ping
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2007, 55 (10) : 2015 - 2023

← 1 2 3 4 5 →