Modeling and analysis of 1.3 μm InAs/GaAs self-assembled quantum dot lasers with rate equation

被引：0
|
作者：
Liu, C. Y.
Wang, H.
Meng, Q. Q.
机构：
来源：
PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) | 2013年
关键词：
quantum dot laser; rate equation; carrier dynamics; modal gain; TEMPERATURE-DEPENDENCE; GAIN; PERFORMANCE; THRESHOLD;
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature (20-100 degrees C) and excitation power (10-700 mW)-dependent photoluminescence (PL) measurements have been carried out on the 1.3 mu m GaAs-based InAs quantum dot (QD) laser structures. Rate equation was used to interpret the PL behavior of the QD. The exciton behavior of the carriers in InAs QD has been verified. The excitonic modal gain has been calculated (under exciton picture) and compared with the experimentally obtained modal gain value from the QD laser.
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页码：74 / 77
页数：4
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