Synthesis of SiC nanowires by thermal evaporation method without catalyst assistant

被引：66

作者：

Chen, Kai ^{[1
]}

Huang, Zhaohui ^{[1
]}

Huang, Juntong ^{[1
]}

Fang, Minghao ^{[1
]}

Liu, Yan-gai ^{[1
]}

Ji, Haipeng ^{[1
]}

Yin, Li ^{[1
]}

机构：

[1] China Univ Geosci, Sch Mat Sci & Technol, Beijing 100083, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2013年 / 39卷 / 02期

基金：

中国国家自然科学基金;

关键词：

SiC; Nanowires; Vapor-solid process; SiC-SiO2 core-shell structure; SILICON-CARBIDE NANOWIRES; LARGE-SCALE SYNTHESIS; FIELD-EMISSION; GROWTH; NANOSTRUCTURES; NANORODS; ARRAYS; CARBON;

D O I：

10.1016/j.ceramint.2012.08.046

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, SiC nanowires were successfully synthesized on Si substrate by the thermal evaporation method without the assistance of a metal catalyst. The phase composition, morphology and microstructure of the SiC-SiO2 core-shell nanowires were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM). The SiC nanowires produced grew along the [111] direction and had diameters of 50-100 nm with lengths of several hundreds of microns. The SiC nanowire was composed of a single-crystalline SiC core with a thin amorphous SiO2 shell. The growth mechanism of the nanowires can be explained by the vapor-solid (VS) process. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：1957 / 1962

页数：6

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