EUV LITHOGRAPHY Lithography gets extreme

被引：488
|
作者：
Wagner, Christian [1 ]
Harned, Noreen [1 ]
机构：
[1] ASML, EUV, NL-5500 AH Veldhoven, Netherlands
来源：
NATURE PHOTONICS | 2010年 / 4卷 / 01期
关键词：
D O I：
10.1038/nphoton.2009.251
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
[No abstract available]
引用
收藏
页码：24 / 26
页数：3
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