Efficient luminescence from porous silicon

被引：0
|
作者：
Daami, A [1 ]
Bremond, G [1 ]
Stalmans, L [1 ]
Poortmans, J [1 ]
机构：
[1] Inst Natl Sci Appl, UMR CNRS 5511, Phys Mat Lab, F-69621 Villeurbanne, France
来源：
LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS | 1999年 / 77卷
关键词：
porous silicon; photoluminescence; passivation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence measurements are carried out on porous silicon layers. We show the enhancement and stabilization of the luminescence when depositing a silicon nitride layer on top of porous layers. We also demonstrate that direct- and remote-plasma nitridation are good ways to reduce the ageing effect of porous silicon layers due to a passivation of dangling bonds. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：169 / 172
页数：4
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