Monte Carlo study of β-Ga2O3 conductivity

被引:0
|
作者
Abdrakhmanov, V. L. [1 ]
Konchenkov, V. I. [1 ]
Zav'yalov, D. V. [1 ]
机构
[1] Volgograd State Tech Univ, Dept Phys, Volgograd 400005, Russia
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D O I
10.1088/1742-6596/1400/4/044024
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using semiclassical Monte Carlo simulations a conductivity of beta-Ga2O3 is investigated considering a scattering of charge carriers on acoustical phonons, polar optical phonons and charged impurities. Modelling takes into account 12 IR active polar optical phonons modes. Dependence of mean collision frequency on energy of charge carriers is examined. The results are compared with the conclusions of other groups of researchers.
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页数:6
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