A low-voltage and variable-gain distributed amplifier for 3.1-10.6 GHz UWB systems

被引：27
|
作者：
Shin, SC [1 ]
Lin, CS
Tsai, MD
Tsai, MD
Lin, KY
Wang, H
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 106, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 04期
关键词：
low noise amplifier (LNA); low voltage; microwave; monolithic integrated circuit (MMIC); radio frequency integrated circuit (RFIC); SiGeBiCMOS; ultra-wideband (UWB); variable gain;
D O I：
10.1109/LMWC.2006.872134
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-voltage and variable-gain distributed amplifier is presented in this letter. This microwave monolithic integrated circuit amplifier achieves 12-dB gain with a 3-dB frequency band of 1.6-12.1 GHz and 6.5-dB noise figure under the bias condition of 0.8-V supply voltage and 6.4-mW total dc power consumption. The gain-control range is from -18 dB to +20 dB. Resistive metaloxide-semiconductor field-effect transistors are used as termination resistors to compensate the mismatch due to different bias conditions. From 3.1 to 10.6 GHz, the maximum gain ripple of this amplifier is only +/- 1 dB for the gain level between -4 and 20 dB.
引用
收藏
页码：179 / 181
页数：3
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