Memristors Based on Nanoscale Layers LiNbO3and (Co40Fe40B20)x(LiNbO3)100- x

被引：6
|
作者：
Nikiruy, K. E. [1 ]
Iliasov, A. I. [1 ,2 ]
Emelyanov, A., V [1 ,3 ]
Sitnikov, A., V [1 ]
Rylkov, V. V. [1 ,4 ]
Demin, V. A. [1 ]
机构：
[1] Natl Res Ctr, Kurchatov Inst, Moscow, Russia
[2] Moscow MV Lomonosov State Univ, Moscow, Russia
[3] Moscow Inst Phys & Technol, Dolgoprudnyi, Russia
[4] Russian Acad Sci, Fryazin Branch, Kotelnikov Inst Radio Engn & Elect, Fryazino, Russia
来源：
PHYSICS OF THE SOLID STATE | 2020年 / 62卷 / 09期
基金：
俄罗斯科学基金会;
关键词：
memristor; resistive switching effect; metal-oxide nanocomposite;
D O I：
10.1134/S1063783420090218
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The memristive properties of layered capacitor structures based on a (Co40Fe40B20)(x)(LiNbO3)(100 -) (x)nanocomposite and LiNbO(3)with thicknesses of 10 and 40 nm, respectively, are studied. There was a sharp transition from a single-filament to multi-filament resistive switching mechanism observed for the first time which appeared with an increase in an amount of the metal phase in the nanocomposite; this mechanism is explained within a model proposed previously.
引用
收藏
页码：1732 / 1735
页数：4
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