Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities

被引：4

作者：

Ide, Kimiyasu ^{[1
]}

Matsubara, Yuko ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Akasaki, Isamu ^{[1
,3
]}

Amano, Hiroshi ^{[2
,3
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 08期

关键词：

PIEZOELECTRIC FIELDS; GROWTH; GAN;

D O I：

10.7567/JJAP.52.08JE22

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the epitaxial lateral growth technique, we compared the crystallinity and relaxation ratio of 3-mu m- and 200-nm-thick Al0.5Ga0.5N on an AlN template and AlN grown by epitaxial lateral overgrowth (ELO-AlN), both of which were grown on a sapphire substrate. Although the relaxation ratios of 3-mu m-thick Al0.5Ga0.5N were almost the same, the misfit dislocation density at the interface and the density of threading dislocations reaching the surface of Al0.5Ga0.5N were significantly different. Also, the increase in the density of newly generated misfit dislocations was found to be highly dependent on the quality of the AlN underlying layer. We also discuss the difference in the initial growth mode of each Al0.5Ga0.5N sample. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 48 条

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