Beyond CMOS Devices As Enablers of Future Energy Efficient Integrated Circuits and Systems

被引:0
|
作者
Ionescu, Adrian M. [1 ]
Salvatore, Giovanni [1 ]
Lattanzio, Livio [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Nanoelect Devices Lab, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1149/1.3487535
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
This paper presents an overview of most recent advances in energy efficient beyond CMOS devices, with particular emphasis on tunneling FETs, ferroelectric FETs and some novel hybrid devices that use combined internal mechanisms for steep switching between off and on states. Their physical mechanisms and practical limits are discussed. Such novel devices categories hold promise for future logic circuit operating at sub-0.5V voltage supply and for reducing by orders of magnitude the subthreshold power consumption. The co-integration of the steep swing switches with high performance CMOS platforms is foreseen as an enabler of novel hybrid circuit and system co-design, featuring both high performance and energy efficient modules.
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收藏
页码:73 / 76
页数:4
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