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- [31] Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 Ghz) in a 0.18um CMOS process ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 2000, 2000, : 251 - 259
- [32] A Smartphone SP10T T/R Switch in 180-nm SOI CMOS with 8kV+ESD Protection by Co-Design 2013 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2013,
- [34] ESD Protection Design with Adjustable Snapback Behavior for 5-V Application in 100nm CMOS Process 2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013,
- [35] A High-Isolation High-Linearity 24-GHz CMOS T/R Switch in the 0.18-μm CMOS Process 2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), 2009, : 250 - 253
- [36] A High Performance PD SOI CMOS Single-pole Double-throw T/R Switch for 2.4GHz Wireless Applications 2009 5TH INTERNATIONAL CONFERENCE ON WIRELESS COMMUNICATIONS, NETWORKING AND MOBILE COMPUTING, VOLS 1-8, 2009, : 2498 - 2501
- [37] Design of ESD Protection for Large Signal Swing RF Inputs Operating to 24GHz in 0.18um SiGe BiCMOS Process PROCEEDINGS OF THE 2015 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC 2015), 2015, : 413 - 416
- [38] Design and Analysis of a 2.4 GHz Fully Integrated 1.8V Power Amplifier in TSMC 180nm CMOS RF Process for Wireless Communication 2015 INTERNATIONAL CONFERENCE ON VLSI SYSTEMS, ARCHITECTURE, TECHNOLOGY AND APPLICATIONS (VLSI-SATA), 2015,
- [39] A full Cu damascene metallization process for sub-0.18μm RF CMOS SoC high Q inductor and MIM capacitor application at 2.4GHz and 5.3GHz PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, : 113 - 115