Numerical Solutions for Electric Field Lines and Breakdown Voltages in Superjunction-Like Power Devices

被引：3

作者：

Huang, Haimeng ^{[1
]}

Hu, Ke ^{[1
]}

Xu, Wenjia ^{[1
]}

Xu, Shaodi ^{[1
]}

Cui, Wentao ^{[2
]}

Zhang, Weijia ^{[2
]}

Ng, Wai Tung ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Breakdown voltage (BV); electric field line (EFL); impact ionization integral; superjunction-like (SJ-like) power devices; ON-RESISTANCE; IONIZATION RATES; DRIFT REGION; OPTIMIZATION; MOSFET;

D O I：

10.1109/TED.2020.3007598

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An accurate method for the evaluation of breakdown voltages (BVs) in the superjunction-like (SJ-like) power devices is presented. This brief investigates the conventional SJ (c-SJ), the insulator pillar SJ (I-SJ), and the high-permittivity (Hk) structures. Based on the numerical calculations of the electric field line (EFL) distribution, the electric field profiles along the EFLs can be accurately obtained. This ensures the accurate determination of the impact ionization integrals and BV. The technology computer-aided design (TCAD) simulations confirm the validity of the proposed method. The proposed method could be of great significance for the optimization of the specific ON-resistance (R-ON,R-sp) and could provide a better understanding of the SJ-like power devices.

引用

页码：3898 / 3902

页数：5

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