Advanced phase-modulators for next-generation low-temperature Si film crystallization method

被引:0
|
作者
Taniguchi, Y. [1 ]
Katou, T. [1 ]
Matsumura, M. [1 ]
机构
[1] Adv LCD Technol Dev Ctr Co Ltd, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A phase-modulator having only 'holes' (or 'bumps') on a quartz plate has been found to have insufficient depth-of-focus characteristics. This poor depth-of-focus can be attributed to phase retardation effect. Based on this, two bipolar phase-modulators were developed. The first has a deep depth-of-focus and the second is a single-plate modulator that can generate a two-dimensional light intensity profile. It was confirmed experimentally that the second modulator could grow arrays of large grains with 5-mu m pitch.
引用
收藏
页码:981 / 982
页数:2
相关论文
共 50 条
  • [21] Low-temperature crystallization of amorphous Si films by metal adsorption and diffusion
    Korea Advanced Inst of Science and, Technology, Taejon, Korea, Republic of
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 1005 - 1009
  • [22] LOW-TEMPERATURE DIFFUSION OF AU INTO SI IN SI(SUBSTRATE)-AU(FILM) SYSTEM
    NAKASHIMA, K
    IWAMI, M
    HIRAKI, A
    THIN SOLID FILMS, 1975, 25 (02) : 423 - 430
  • [23] Advanced Phase Estimation and Design for Next-Generation Radar Systems: A Digital Approach
    Sivaprasad, Ponduri
    Venkataraman, Anandi
    Murty, P. Satyanarayana
    TRAITEMENT DU SIGNAL, 2024, 41 (02) : 827 - 833
  • [24] Low temperature crystallization of a-Si thin film by nickel MOCVD
    Lee, Sang-Joo
    Yun, Seung-Jae
    Son, Se-Wan
    Byun, Chang-Woo
    Joo, Seung-Ki
    CURRENT APPLIED PHYSICS, 2011, 11 (04) : S151 - S153
  • [25] Low-temperature crystallization of oriented ZnO film using seed layers prepared by sol–gel method
    Hiroyo Segawa
    Hideaki Sakurai
    Reiko Izumi
    Toshiharu Hayashi
    Tetsuji Yano
    Shuichi Shibata
    Journal of Materials Science, 2011, 46 : 3537 - 3543
  • [26] NEW METHOD FOR DETERMINATION OF LOW-TEMPERATURE CRYSTALLIZATION BEHAVIOR OF VULCANIZATES
    DELLEPIANE, U
    BASSI, AC
    RHEOLOGICA ACTA, 1975, 14 (02) : 199 - 199
  • [27] Low Temperature Crystallization Technology of Extremely Thin TCO for Next Generation Panels
    Yukawa, Tomiyuki
    Takei, Masaki
    Oono, Youhei
    Ota, Atsushi
    Arai, Makoto
    Kiyota, Junya
    Ishibashi, Satoru
    Saito, Kazuya
    IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 3, 2012, 19 : 1635 - 1637
  • [28] Nanoscale redox reaction unlocking the next-generation low temperature fuel cell
    Fan, Qi
    Yan, Shicheng
    Wang, Hao
    ENERGY MATERIALS, 2022, 2 (01):
  • [29] Microwave-induced low-temperature crystallization of amorphous Si thin films
    Ahn, JH
    Lee, JN
    Kim, YC
    Ahn, BT
    CURRENT APPLIED PHYSICS, 2002, 2 (02) : 135 - 139
  • [30] CRYSTALLIZATION OF AMORPHOUS PD-SI ALLOY DURING LOW-TEMPERATURE ANNEALING
    MAEDA, M
    MUKASA, K
    KUDO, Y
    SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY, 1980, 28 : 118 - 123