Study on the filling fraction limit of impurities in CoSb3

被引:0
|
作者
Shi, X. [1 ]
Zhang, W. [1 ]
Chen, L. [1 ]
Yang, J. [2 ]
机构
[1] Shanghai Inst Ceram, State Key Lab High Performance, Shanghai 200050, Peoples R China
[2] GM R&D Ctr, Mat & Proc Lab, Warren, MI 48090 USA
关键词
D O I
暂无
中图分类号
O414.1 [热力学];
学科分类号
摘要
Complex crystals such as skutterudites have interstitial voids in the lattice that can be filled by various impurity atoms. The filling fraction limit (FFL) for the intrinsic voids in the lattice of CoSb3 is studied by density functional methods. The FFL is shown to be determined not only by the interaction between the impurity and host atoms but also by the formation of secondary phases between the impurity atoms and one of the host atoms. A model is proposed to quantitatively explain the phenomenon. The predicted FFLs for Ca, Sr, Ba, La, Ce, and Yb in CoSb3 are in excellent agreement with reported experimental data. Detailed analysis reveals the existence of a quantitative relationship between the repulsive interaction of impurity atoms and their charge state. A correlation between the FFL of an impurity atom and its charge state and electronegativity is discovered.
引用
收藏
页码:355 / +
页数:4
相关论文
共 50 条
  • [41] NMR investigation of the skutterudite compound CoSb3
    Lue, C. S.
    Lin, Y. T.
    Kuo, C. N.
    PHYSICAL REVIEW B, 2007, 75 (07)
  • [42] Experimental and theoretical study of electron density and structure factors in CoSb3
    Saeterli, R.
    Flage-Larsen, E.
    Friis, J.
    Lovvik, O. M.
    Pacaud, J.
    Marthinsen, K.
    Holmestad, R.
    ULTRAMICROSCOPY, 2011, 111 (07) : 847 - 853
  • [43] CRYSTALLIZATION BEHAVIOR OF CoSb3 THIN FILMS
    Schuepp, B.
    Sauchuk, V.
    Schumann, J.
    Mattern, N.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2002, 58 : C334 - C334
  • [44] Electrochemical reaction of lithium with the CoSb3 skutterudite
    Alcántara, R
    Fernández-Madrigal, FJ
    Lavela, P
    Tirado, JL
    Jumas, JC
    Olivier-Fourcade, J
    JOURNAL OF MATERIALS CHEMISTRY, 1999, 9 (10) : 2517 - 2521
  • [45] Synthesis of CoSb3 by a modified polyol process
    Yang, L.
    Hng, H. H.
    Cheng, H.
    Sun, T.
    Ma, J.
    MATERIALS LETTERS, 2008, 62 (15) : 2483 - 2485
  • [46] CoSb3 Based Skutterudites Thermoelectric Materials
    Wang C.
    Zhang R.
    Jiang J.
    Niu Y.
    Yang C.-C.
    Zhou T.
    Pan Y.
    Dianzi Keji Daxue Xuebao/Journal of the University of Electronic Science and Technology of China, 2020, 49 (06): : 934 - 941
  • [47] Effect of MG on the thermoelectric properties of CoSb3
    Osaka Univ, Suita, Japan
    Funtai Oyobi Fummatsu Yakin, 1 (29-33):
  • [48] THERMOELECTRIC PROPERTIES OF COSB3 AND RELATED ALLOYS
    SHARP, JW
    JONES, EC
    WILLIAMS, RK
    MARTIN, PM
    SALES, BC
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 1013 - 1018
  • [49] Properties of single crystalline semiconducting CoSb3
    Caillat, T
    Borshchevsky, A
    Fleurial, JP
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (08) : 4442 - 4449
  • [50] Effects of doping on the transport properties of CoSb3
    Anno, H
    Matsubara, K
    Notohara, Y
    Sakakibara, T
    Tashiro, H
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) : 3780 - 3786