Exohedral bonding nature of Si atom on the Ba@Si28 cluster;: Ab initio study

被引:3
|
作者
Tsumuraya, K [1 ]
Nagano, T
Eguchi, H
Takenaka, H
机构
[1] Meiji Univ, Sch Sci & Engn, Dept Mech Sci & Syst Engn, Kawasaki, Kanagawa 2418571, Japan
[2] Ishikawajima Harima Ind Co Ltd, Res Lab, Tokyo 1358732, Japan
关键词
silicon cluster; ab initio molecular dynamics; pseudopotential; planewaves; clathrate; optimized structure;
D O I
10.2320/matertrans.43.704
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First-principle electronic structure is studied for the Si-28 and Ba @ Si-28 clusters. which are components of the clusters in silicon clathrate II. We obtain the geometrically optimized relaxed cage structures of the clusters and the exohedral binding nature of single Si atom on the Ba @ Si-28 clusters. The hollow Si-28 cluster relaxes into the Si-24 like cluster in the clathrate I having four exohedral Si atoms outside the hexagon in the Si-24 cluster. The hexagons on the Ba @ Si-28 cluster are deformed into a chair type with relaxation. The exohedral Si atom is the most stable at the edge center near the top that meets three pentagons, We have found for the first time that the exohedral Si atom forms the three-center covalent bond between the two caged Si atoms.
引用
收藏
页码:704 / 707
页数:4
相关论文
共 50 条
  • [41] AB-INITIO STUDY OF STRUCTURE AND DYNAMICS OF THE SI(100) SURFACE
    SHKREBTII, AI
    DEFELICE, R
    BERTONI, CM
    DELSOLE, R
    PHYSICAL REVIEW B, 1995, 51 (16): : 11201 - 11204
  • [42] Ab-initio study of the adsorption of acetylene on Si(001) surface
    Pulci, O
    Silvestrelli, PL
    Palummo, M
    Ancilotto, F
    Del Sole, R
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 0, NO 8, 2003, 0 (08): : 2997 - 3001
  • [43] Ab initio study of quantum confined unpassivated ultrathin Si films
    Agrawal, BK
    Agrawal, S
    APPLIED PHYSICS LETTERS, 2001, 79 (26) : 4366 - 4368
  • [44] Ab initio study on the mechanism of cycloaddition reaction between H2Si=Si: and formaldehyde
    Xiuhui Lu
    Leyi Shi
    Zhenxia Lian
    Yongqing Li
    Structural Chemistry, 2011, 22 : 857 - 864
  • [45] Ab initio study of epitaxial growth on stepped Si(100) surface
    Milman, V
    INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1997, 61 (04) : 719 - 724
  • [46] Electronic and optical properties of Si and Ge nanocrystals: An ab initio study
    Pulci, Olivia
    Degoli, Elena
    Iori, Federico
    Marsili, Margherita
    Palummo, Maurizia
    Del Sole, Rodolfo
    Ossicini, Stefano
    SUPERLATTICES AND MICROSTRUCTURES, 2010, 47 (01) : 178 - 181
  • [47] Ab initio study of hydrogenic effective mass impurities in Si nanowires
    Peelaers, H.
    Durgun, E.
    Partoens, B.
    Bilc, D. I.
    Ghosez, Ph
    Van de Walle, Chris G.
    Peeters, F. M.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (09)
  • [48] Ab initio study of the adsorption and desorption of Se on the Si(001) surface
    Çakmak, M
    Srivastava, GP
    Ellialtioglu, S
    Çolakoglu, K
    SURFACE SCIENCE, 2002, 507 : 29 - 33
  • [49] Ab initio study of metastable structures on a hydrogenated Si(001) surface
    Muramatsu, S
    Hirao, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (2B): : L171 - L173
  • [50] Ab initio study of the magnetic ordering in Si/Mn digital alloys
    Otrokov, M. M.
    Ernst, A.
    Tugushev, V. V.
    Ostanin, S.
    Buczek, P.
    Sandratskii, L. M.
    Fischer, G.
    Hergert, W.
    Mertig, I.
    Kuznetsov, V. M.
    Chulkov, E. V.
    PHYSICAL REVIEW B, 2011, 84 (14):