Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition

被引：218
|
作者：
Kim, JK [1 ]
Kim, SS
Kim, WJ
Bhalla, AS
Guo, R
机构：
[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, Kyungnam, South Korea
[2] Penn State Univ, Mat Res Lab 187, University Pk, PA 16802 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1063/1.2189453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multiferroic Cr-doped BiFeO3 (BFO) thin films were prepared on Pt/TiO2/SiO2/Si(100) substrates by a chemical solution deposition method. From the x-ray photoelectron spectroscopy measurements, it was observed that the valence number of Fe ion in undoped and Cr-doped BFO thin films was found to be almost 3+. It was found that Cr-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage-current density and P-E hysteresis characteristics. The 3 mol % Cr-doped BFO thin film showed a leakage-current density of 9.2x10(-7) A/cm(2) at 100 kV/cm and a large remanent polarization (P-r) of 61 mu C/cm(2) at room temperature. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Epitaxial BiFeO3 thin films fabricated by chemical solution deposition
    Singh, SK
    Kim, YK
    Funakubo, H
    Ishiwara, H
    APPLIED PHYSICS LETTERS, 2006, 88 (16)
  • [32] Thickness-Dependent Dielectric, Ferroelectric, and Magnetodielectric Properties of BiFeO3 Thin Films Derived by Chemical Solution Deposition
    Tang, Xianwu
    Dai, Jianming
    Zhu, Xuebin
    Lin, Jianchao
    Chang, Qing
    Wu, Dajun
    Song, Wenhai
    Sun, Yuping
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2012, 95 (02) : 538 - 544
  • [33] Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering
    Das, R. R.
    Kim, D. M.
    Baek, S. H.
    Eom, C. B.
    Zavaliche, F.
    Yang, S. Y.
    Ramesh, R.
    Chen, Y. B.
    Pan, X. Q.
    Ke, X.
    Rzchowski, M. S.
    Streiffer, S. K.
    APPLIED PHYSICS LETTERS, 2006, 88 (24)
  • [34] Enhanced leakage and ferroelectric properties of Zn-doped BiFeO3 thin films grown by sol-gel method
    Yang, Shiju
    Zhang, Fengqing
    Xie, Xiaobin
    Sun, Huajun
    Zhang, Liping
    Fan, Suhua
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 734 : 243 - 249
  • [35] Enhanced leakage and ferroelectric properties of Zn-doped BiFeO3 thin films grown by sol-gel method
    Fan, Suhua (suhuafan@126.com), 1600, Elsevier Ltd (734):
  • [36] Improved ferroelectric and fatigue properties in Ho doped BiFeO3 thin films
    Yun, Qi
    Bai, Yulong
    Chen, Jieyu
    Gao, Wei
    Bai, Alima
    Zhao, Shifeng
    MATERIALS LETTERS, 2014, 129 : 166 - 169
  • [37] Improved Ferroelectric and Leakage Properties of Ce Doped in BiFeO3 Thin Films
    Bai, Alima
    Zhao, Shifeng
    Chen, Jieyu
    JOURNAL OF NANOMATERIALS, 2014, 2014
  • [38] Effects of excess bismuth content in precursor solutions on ferroelectric properties of BiFeO3 thin films prepared by a chemical solution deposition
    Kim, S. S.
    Choi, E. J.
    Bhalla, A. S.
    FERROELECTRICS LETTERS SECTION, 2007, 34 (3-4) : 84 - 94
  • [39] Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation
    Zhang, Qi
    Valanoor, Nagarajan
    Standard, Owen
    JOURNAL OF MATERIALS CHEMISTRY C, 2015, 3 (03) : 582 - 595
  • [40] Microstructure and electrical properties of cosubstituted BiFeO3 thin films prepared by a chemical solution deposition
    Kim, J. K.
    Kim, S. S.
    Park, M. H.
    Choi, E. J.
    Kim, J. W.
    Guo, R.
    Bhalla, A. S.
    FERROELECTRICS, 2006, 345 : 77 - 82
12345