Unusual growth of polycrystalline oxide film induced by negative ion bombardment in the capacitively coupled plasma deposition

被引:33
|
作者
Takayanagi, S. [1 ]
Yanagitani, T. [2 ]
Matsukawa, M. [1 ]
机构
[1] Doshisha Univ, Grad Sch Sci & Engn, Kyoto 6100321, Japan
[2] Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan
关键词
BEAM-ASSISTED DEPOSITION; TIN THIN-FILMS; ENERGY; TEXTURE; IBAD; ORIENTATION; MECHANISM; LAYERS;
D O I
10.1063/1.4769224
中图分类号
O59 [应用物理学];
学科分类号
摘要
A polycrystalline film usually grows in its most densely packed plane parallel to the substrate plane. We demonstrated that the unusual crystalline growth can occur by using energetic negative ions generated in the magnetron capacitively coupled plasma deposition without using separated ion source. Negative ion energy and flux entering the substrate were quantitatively measured and compared with the preferential crystalline growth of unusual (11 (2) over bar0) orientation in ZnO films. Strong (11 (2) over bar0) orientation was found at the cathode erosion area where large amount of high energy negative ion of 170-250 eV was observed in low gas pressure of 0.1 Pa. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769224]
引用
收藏
页数:3
相关论文
共 50 条
  • [31] Structure and electrical conductivity of polycrystalline silicon films grown by molecularbeam deposition accompanied by low-energy ion bombardment of the growth surface
    D. A. Pavlov
    A. F. Khokhlov
    D. V. Shungurov
    V. G. Shengurov
    Semiconductors, 1997, 31 : 237 - 240
  • [32] LOW-TEMPERATURE POLYCRYSTALLINE SI FILM GROWTH ON AMORPHOUS INSULATORS BY REACTIVE ION-BEAM DEPOSITION
    YAMADA, H
    TORII, Y
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1106 - 1111
  • [33] Axial diagnosis of electron and negative ion behaviors in capacitively coupled O2-containing Ar plasma driven by 27.12 MHz
    Zhao, Yifan
    Zhou, Yu
    Ma, Xiaoping
    Cao, Liyang
    Zheng, Fengang
    Xin, Yu
    PHYSICS OF PLASMAS, 2019, 26 (03)
  • [34] Negative resistance phenomenon in dual-frequency capacitively coupled plasma-enhanced chemical vapor deposition system for photovoltaic manufacturing process
    Kwon, H. C.
    Aman-ur-Rehman
    Won, I. H.
    Park, W. T.
    Lee, J. K.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (02)
  • [35] Thin-film deposition of ZrN using a plasma sputter-type negative ion source
    Ramos, HJ
    Valmoria, NB
    VACUUM, 2004, 73 (3-4) : 549 - 554
  • [36] Effect of negative pulsed high-voltage-bias on diamond-like carbon thin film preparation using capacitively coupled radio-frequency plasma chemical vapor deposition
    Ohtsu, Y.
    Noda, H.
    Nakamura, C.
    Misawa, T.
    Fujita, H.
    Akiyama, M.
    Diplasu, C.
    SURFACE & COATINGS TECHNOLOGY, 2007, 201 (15): : 6674 - 6677
  • [37] Steady state growth conditions in ion assisted or induced planar thin film deposition
    Carter, G
    THIN SOLID FILMS, 1996, 289 (1-2) : 121 - 128
  • [38] Difference in chemical reactions in bulk plasma and sheath regions during surface modification of graphene oxide film using capacitively coupled NH3 plasma
    Lee, Sung-Youp
    Kim, Chan
    Kim, Hong Tak
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (10)
  • [39] Beam induced deposition of an ultraviolet transparent silicon oxide film by focused gallium ion beam
    Ogasawara, M
    Kariya, M
    Nakamura, H
    Komano, H
    Inoue, S
    Sugihara, K
    Hayasaka, N
    Horioka, K
    Takigawa, T
    Okano, H
    Mori, I
    Yamazaki, Y
    Miyoshi, M
    Watanabe, T
    Okumura, K
    APPLIED PHYSICS LETTERS, 1996, 68 (06) : 732 - 734
  • [40] Beam induced deposition of an ultraviolet transparent silicon oxide film by focused gallium ion beam
    Toshiba Research and Development, Cent, Kawasaki, Japan
    Appl Phys Lett, 6 (732-734):