Contribution of domain motion to the dielectric properties of ferroelectric thin films

被引:0
|
作者
Zheng, ZY [1 ]
Zhang, SR [1 ]
Liu, JS [1 ]
Yang, CT [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China
关键词
ferroelectrics; polarization; domain; dielectric response;
D O I
10.1080/10584580500413335
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The variations of polarization and dielectric properties with the grain size of PZT films have been investigated experimentally and theoretically. It is revealed that polarization increases much more quickly with the grain size than dielectric constant does. The polarization increases as the grain size increases and is saturated when the grain size is about 60 nm, whereas the dielectric constant is saturated when the grain size is about 70 nm. Because the dielectric response of ferroelectrics is affected by the domain switching and exhibits hysteresis, the contribution of domain dynamics to the dielectric properties must be considered. Varying grain size will change the domain dynamics due to the close relationship of domain width and grain size. Based on the Landau-Ginzburg (LG) model, the variations of remnant polarization and dielectric constant against grain sizes have been investigated, considering the contribution of domain motion. The calculation result is consistent with the experimental result.
引用
收藏
页码:17 / 23
页数:7
相关论文
共 50 条
  • [41] Effects of crystallization conditions on dielectric and ferroelectric properties of PZT thin films
    Araújo, EB
    Eiras, JA
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (16) : 2010 - 2013
  • [42] Enhanced dielectric and crystalline properties in ferroelectric barium titanate thin films
    Ihlefeld, Jon F.
    Borland, William J.
    Maria, Jon-Paul
    ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (07) : 1199 - 1203
  • [43] Effects of crystallization conditions on dielectric and ferroelectric properties of PZT thin films
    Araújo, E.B.
    Eiras, J.A.
    Journal of Physics D: Applied Physics, 2003, 36 (16): : 2010 - 2013
  • [44] Domain contribution to the low and infralow frequency dielectric response of ferroelectric thin PZT films prepared by the sol-gel method
    A. V. Shil’nikov
    R. A. Laletin
    A. I. Burkhanov
    A. S. Sigov
    K. A. Vorotilov
    Crystallography Reports, 2004, 49 : 137 - 142
  • [45] Domain contribution to the low and infralow frequency dielectric response of ferroelectric thin PZT films prepared by the sol-gel method
    Shil'nikov, AV
    Laletin, RA
    Burkhanov, AI
    Sigov, AS
    Vorotilov, KA
    CRYSTALLOGRAPHY REPORTS, 2004, 49 (01) : 137 - 142
  • [46] Mobile defect contribution to the dielectric non-linearity of PZT ferroelectric thin films
    Goltsman, BM
    Yarmarkin, VK
    Lemanov, VV
    INTEGRATED FERROELECTRICS, 2001, 32 (1-4) : 995 - 1000
  • [47] Electromechanical properties and domain-related effects in ferroelectric thin films
    Kholkin, A
    FERROELECTRICS, 1999, 221 (1-4) : 219 - 228
  • [48] Thickness effect on the dielectric, ferroelectric, and piezoelectric properties of ferroelectric lead zirconate titanate thin films
    de la Cruz, J. Perez
    Joanni, E.
    Vilarinho, P. M.
    Kholkin, A. L.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (11)
  • [49] Microwave dielectric spectroscopy of ferroelectric thin films
    Kim, B
    Kazmirenko, V
    Jeong, M
    Poplavko, Y
    Baik, S
    MATERIALS ISSUES FOR TUNABLE RF AND MICROWAVE DEVICES III, 2002, 720 : 57 - 62
  • [50] Dielectric nonlinearity and loss in ferroelectric thin films
    Xi, XX
    LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING II, 1997, 2991 : 255 - 266