Silicon-doping induced strain of AIN layers: a comparative luminescence and Raman study

被引：15

作者：

Prinz, Guenther M. ^{[1
]}

Feneberg, Martin ^{[1
]}

Schirra, Martin ^{[1
]}

Sauer, Rolf ^{[1
]}

Thonke, Klaus ^{[1
]}

Thapa, Sarad B. ^{[2
]}

Scholz, Ferdinand ^{[2
]}

机构：

[1] Univ Ulm, Inst Halbleiterphys, D-89069 Ulm, Germany

[2] Univ Ulm, Inst Optoelekt, D-89069 Ulm, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 05期

关键词：

D O I：

10.1002/pssr.200802155

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si-doped aluminum nitride layers show a shift of the nearband-edge luminescence at around 6 eV to lower energies for increasing Si concentration up to approximate to(1 - 3) x 10(19) cm(-3). For higher concentrations, the luminescence shifts back to higher energies. This behavior is compared to concomitant shifts of the Raman active E-2 vibrational mode and to X-ray diffraction data. It can be explained in terms of increasing tensile strain which finally to the formation of cracks. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：215 / 217

页数：3

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