Xenon flash lamp annealing shown to be effective for processing ultrathin HfO2 films for advanced CMOS gate dielectrics

被引：0
|
作者：
Abiade, JT
机构：
来源：
MRS BULLETIN | 2006年 / 31卷 / 02期
关键词：
D O I：
10.1557/mrs2006.35
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：83 / 84
页数：2
相关论文
共 50 条
  • [41] Charactcristics of sub-1 nm CVID HfO2 gate dielectrics with HfN electrodcs for advanccd CMOS applications
    Kang, JF
    Yu, HY
    Ren, C
    Wang, XP
    Li, MF
    Chan, DSH
    Liu, XY
    Han, RQ
    Wang, YY
    Kwong, DL
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 393 - 398
  • [42] Advanced Analysis of Silicon Insulator Interface Traps in MOSFET's with SiO2 and with HfO2 as gate dielectrics
    Bauza, D.
    Ghobar, O.
    Guenifi, N.
    Bayon, S.
    SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10, 2009, 19 (02): : 19 - 54
  • [43] Amorphous stability of HfO2 based ternary and binary composition spread oxide films as alternative gate dielectrics
    Hasegawa, K
    Ahmet, P
    Okazaki, N
    Hasegawa, T
    Fujimoto, K
    Watanabe, M
    Chikyow, T
    Koinuma, H
    APPLIED SURFACE SCIENCE, 2004, 223 (1-3) : 229 - 232
  • [44] Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics
    B. Deng
    G. He
    X. S. Chen
    X. F. Chen
    J. W. Zhang
    M. Liu
    J. G. Lv
    Z. Q. Sun
    Journal of Materials Science: Materials in Electronics, 2014, 25 : 4163 - 4169
  • [45] Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics
    Deng, B.
    He, G.
    Chen, X. S.
    Chen, X. F.
    Zhang, J. W.
    Liu, M.
    Lv, J. G.
    Sun, Z. Q.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (09) : 4163 - 4169
  • [46] Lowering of Effective Work Function Induced by Metal Carbide/HfO2 Interface Dipole for Advanced CMOS
    Mizubayashi, Wataru
    Ota, Hiroyuki
    Migita, Shinji
    Morita, Yukinori
    Endo, Kazuhiko
    2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2016, : 123 - 126
  • [47] The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics
    Liu, C. H.
    Juan, P. C.
    Lin, J. Y.
    THIN SOLID FILMS, 2010, 518 (24) : 7455 - 7459
  • [48] Annealing effects of HfO2 gate thin films formed by inductively coupled sputtering technique at room temperature
    Choi, WJ
    Lee, EJ
    Yoon, KS
    Yang, JY
    Lee, JH
    Kim, CO
    Hong, JP
    Kang, HJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 : S716 - S719
  • [49] Electrical Properties of Radio-Frequency Sputtered HfO2 Thin Films for Advanced CMOS Technology
    Sarkar, Pranab Kumar
    Roy, Asim
    ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2015), 2015, 1675
  • [50] Effective interface passivation of a Ge/HfO2 gate stack using ozone pre-gate treatment and ozone ambient annealing
    赵梅
    梁仁荣
    王敬
    许军
    Journal of Semiconductors, 2013, (06) : 181 - 184
12345