Xenon flash lamp annealing shown to be effective for processing ultrathin HfO2 films for advanced CMOS gate dielectrics

被引：0
|
作者：
Abiade, JT
机构：
来源：
MRS BULLETIN | 2006年 / 31卷 / 02期
关键词：
D O I：
10.1557/mrs2006.35
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
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页码：83 / 84
页数：2
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