Electromagnetically induced transparency in a GaAs/InAs/GaAs quantum well in the influence of laser field intensity

Effects of laser field on electromagnetically induced transparency is investigated in a GaAs/InAs/GaAs quantum well. The taken system is InAs sandwiched between GaAs semiconducting materials. The confinement potential and the well size of the quantum well are kept constant. The three atomic sub-levels are considered and the system is considered using a density matrix approach. Laser field induced intersubband electromagnetically induced transparency in the three level single quantum well is discussed theoretically. Laser field related optical susceptibilities, Rabi frequency and the detuning parameters are computed in the present work. The variation of real and imaginary parts of optical susceptibility as a function of normalized detuning, in the influence of laser field, is obtained. The refractive index and the group velocity of the probe light pulse are found in the presence of laser field intensity. The variation of group index as a function of probe field energy, with the application of laser field, is reported. For the five units of laser parameter, the reduction of (p)/(c) value is found to be 0.0762. The laser field dependence on the optical susceptibilities on the normalized detuning, refractive index and the group index is brought out.