Fabrication of sub-quarter-micron grating patterns by employing DUV holographic lithography

被引：1
|
作者：
Wang, LA
Lin, CH
Chen, JH
机构：
[1] Inst. of Electro-Optical Engineering, National Taiwan University, Taipei
来源：
MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(99)00057-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sub-quarter-micron grating patterns with period as fine as 0.22 mu m have been obtained by combining DUV holographic lithography and silylation technique for the first time. A traditional chemical amplified resist (JSR KRF/K2G) originally working for single layer process at 248 nm wavelength was used for silylation. The silylation selectivity was improved by process control and a photoresist pattern with an aspect ration of 4 was obtained.
引用
收藏
页码：173 / 177
页数：5
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