An X-ray topography study of the dendritic web silicon growth process

被引：5

作者：

Morelhao, SL ^{[1
]}

Mahajan, S ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT MS&E,PITTSBURGH,PA 15213

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 177卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(96)00809-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this study, transmission X-ray topography was used for investigating the nature of dislocation networks in as-grown dendritic web silicon ribbons. We were able to correlate minority carrier diffusion length with the configuration of the networks that are strongly affected by twin planes lying midway across the web thickness. Analysis of the networks is also useful in providing information regarding regions of high stress levels associated with a given growth environment.

引用

页码：41 / 51

页数：11

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