The Influence of Sputtering Power on Phase-Change Films

被引：0

作者：

Zhang, Lei ^{[1
]}

Gu, Lixin ^{[1
]}

Han, Xiaodong ^{[1
]}

Huang, Huan ^{[2
]}

Dai, Yanan ^{[1
]}

Cheng, Yan ^{[3
]}

Wang, Yang ^{[2
]}

Zhang, Ze ^{[4
]}

Wu, Yiqun ^{[2
]}

Liu, Bo ^{[3
]}

Song, Zhitang ^{[3
]}

机构：

[1] Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Dens Opt Data Storage, Shanghai 201800, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China

[4] Zhejiang Univ, Dept Mat, Hangzhou 310008, Zhejiang, Peoples R China

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 06期

关键词：

THIN-FILMS; ELECTRON-MICROSCOPY; GE2SB2TE5; FILMS; MEMORY; STORAGE; ORIENTATION; PARAMETERS; ALLOY;

D O I：

10.1149/2.024206esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Sputter-deposited amorphous films of a phase-change material (Ge2Sb2Te5) were prepared with various magnetron sputtering powers to determine its influence. Microscopic characteristics indicate that the sputtering power affects the film morphology: high sputtering powers lead to inhomogeneous domain-like patterns. The transition temperature from a metastable phase to a hexagonal phase decreased as the sputtering power increased. However, an analysis of the radial distribution functions indicates that the sputtering power did not have a distinct influence on the inner atomic structure of the amorphous phase. Therefore, a low sputtering power is beneficial to improve the quality of sputtered amorphous films. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.024206esl] All rights reserved.

引用

页码：H205 / H207

页数：3

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