Extended solid-on-solid model for heteroepitaxial growth

被引：8

作者：

Kawamura, T ^{[1
]}

Natori, T ^{[1
]}

机构：

[1] Univ Yamanashi, Dept Phys, Yamanashi 4008510, Japan

来源：

SURFACE SCIENCE | 1999年 / 438卷 / 1-3期

关键词：

Ge on Si(001); heteroepitaxial growth; simulation; solid-on-solid model;

D O I：

10.1016/S0039-6028(99)00564-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A Monte Carlo simulation, based on an extended form of solid-on-solid model, is developed for studying heteroepitaxial growth. In addition to the usual lattice coordinate, a new coordinate is introduced when a nucleus of each island is formed in order to take into account the effect of lattice mismatch. Growth of Ge on Si(001) surface is studied as an example. The growth mode transition from layer-by-layer mode to 3D island mode is obtained, which shows a good agreement with the reported experimental observations. It is found that the height distribution function as well as the surface step density shows oscillation during the layer-by-layer growth. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：148 / 154

页数：7

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