Nonlocal formulation of spin Coulomb drag

被引：2
|
作者：
D'Amico, I. [1 ]
Ullrich, C. A. [2 ]
机构：
[1] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
来源：
PHYSICAL REVIEW B | 2013年 / 88卷 / 15期
基金：
英国工程与自然科学研究理事会;
关键词：
ELECTRON-GAS; SEMICONDUCTORS;
D O I：
10.1103/PhysRevB.88.155324
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The spin Coulomb drag (SCD) effect occurs in materials and devices where charged carriers with different spins exchange momentum via Coulomb scattering. This causes frictional forces between spin-dependent currents that lead to intrinsic dissipation, which may limit spintronics applications. A nonlocal formulation of SCD is developed which is valid for strongly inhomogeneous systems such as nanoscale spintronics devices. This nonlocal formulation of SCD is successfully applied to linewidths of intersubband spin plasmons in semiconductor quantum wells, where experiments have shown that the local approximation fails.
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页数：5
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