Ferroelectricity in Gd-Doped HfO2 Thin Films

被引：243
|
作者：
Mueller, S. [1 ]
Adelmann, C. [2 ]
Singh, A. [1 ]
Van Elshocht, S. [2 ]
Schroeder, U. [1 ]
Mikolajick, T. [1 ,3 ]
机构：
[1] Namlab gGmbH, D-01187 Dresden, Germany
[2] IMEC, B-3001 Louvain, Belgium
[3] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2012年 / 1卷 / 06期
关键词：
POLARIZATION;
D O I：
10.1149/2.002301jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The incorporation of Gd into HfO2 thin films is shown to induce ferroelectricity. A significant influence of electric field cycling on both polarization as well as small-signal capacitance-voltage measurements can be observed. X-ray diffraction measurements are supported by infrared absorption analysis and give further evidence of the previously proposed non-centrosymmetric transition phase of space group Pbc2(1). (C) 2012 The Electrochemical Society. All rights reserved.
引用
收藏
页码：N123 / N126
页数：4
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