Carrier dynamics in self-assembled InAs quantum dots

被引：1
|
作者：
Zhang, XH [1 ]
Dong, JR [1 ]
Chua, SJ [1 ]
机构：
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II | 2001年 / 4594卷
关键词：
D O I：
10.1117/12.446588
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence (PL) spectra and time resolved PL from self-assembled InAs/GaAs quantum dots (QDs) grown by metal organic chemical vapor deposition are studied. A reduction in the emission linewidth with increasing temperature was observed at low temperature range and an increase in the linewidth at higher temperature, It was also observed that the variation of PL peak energy with temperature does not follow Varshni's equation. These anomalous behaviors of PL can be explained in term of thermal redistribution of carriers. It was also found that the PL decay time increases with photon wavelength, which is due to the carrier transfer between laterally coupled QDs.
引用
收藏
页码：192 / 196
页数：5
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